D43256BGU

DATA SHEET www.DataSheet4U.com MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations. The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I). Features 32,768 words by 8 bits organization Fast access time: 70, 85, 100, 120, 150 ns (MAX.) Wide voltage range (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) 2 V data retention OE input for easy application Operating supply voltage V 4.5 to 5.5 Operating temperature °C 0 to 70 Standby supply current µA (MAX.) 50 15 3.0 to 5.5 2.7 to 5.5 Data retention supply currentNote 1 µA (MAX.) 3 2 Part number Access time ns (MAX.) 70, 85 70, 85 85, 100Note 2, 120Note 2 µPD43256B-L µPD43256B-LL µPD43256B-A µPD43256B-BNote 2 100, 120, 150 Notes 1. TA ≤ 40 ˚C, VCC = 3 V 2. Access time : 85 ns (MAX.) (VCC = 4.5 to 5.5 V) Version X and P This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in the fifth character position in a lot number signifies version X, letter P, version P. JAPAN D43256B Lot number The information in this document is subject to change without notice. Document No. M10770EJ9V0DS00 (9th edition) Date Published May 1997 N Printed in Japan The mark shows major...