DatasheetsPDF.com

2SK3880 Dataheets PDF



Part Number 2SK3880
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet 2SK3880 Datasheet2SK3880 Datasheet (PDF)

2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Puls.

  2SK3880   2SK3880



Document
2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.5 19.5 80 375 6.5 8 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16F1B 2 Weight: 5.8 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-01-18 2SK3880 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min ⎯ ±30 ⎯ 800 2.0 ⎯ 2.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.35 5.2 1500 25 140 35 Max ±10 ⎯ 100 ⎯ 4.0 1.7 ⎯ ⎯ ⎯ pF Unit µA V µA V V Ω S ⎯ 10 V VGS 0V 50 Ω VOUT ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ Turn-on time Switching time Fall time ton RL= 114 Ω VDD ∼ − 400 V 80 tf Duty < = 1%, tw = 10 µs 50 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge toff Qg Qgs Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A 220 35 22 13 ⎯ ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/µs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1200 11.5 Max 6.5 19.5 −1.7 ⎯ ⎯ Unit A A V ns µC Marking TOSHIBA K3880 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-18 2SK3880 5 COMMON SOURCE Common source TcTc =25°C 25°C = Pulse testTEST PULSE ID − VDS 8,10 6 5.5 10 ID − VDS 8,10 6 COMMON SOURCE Tc = 25°C PULSE TEST (A) (A) 4 8 5.75 6 DRAIN CURRENT ID 3 5.25 DRAIN CURRENT ID 5.5 4 2 5 5.25 5 1 VGS=4.5V 0 0 2 4 6 DRAIN−SOURCE VOLTAGE 8 10 2 VGS=4.5V 0 0 10 20 30 40 VDS (V) 50 VDS (V) DRAIN−SOURCE VOLTAGE ID − VGS 16 Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test 12 PULSE TEST 20 (V) VDS − VGS COMMON CommonSOURCE source Tc = 25°C Ta=25℃ PULSE TEST Pulse test DRAIN CURRENT ID DRAIN−SOURCE VOLTAGE VDS (A) 16 12 ID=7A 8 8 3.5 4 Ta=100℃ -55 25 4 1.5 0 0 2 4 6 VGS 0 8 (V) 10 0 GATE−SOURCE VOLTAGE 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) 20 100 FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) ⎪Yfs⎪ − ID DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) RDS (ON) − ID 10.00 Common source COMMON SOURCE =10V V GS VGS = 10 V Tc =Tc=25℃ 25°C PULSE TEST Pulse test Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test PULSE TEST 10 -55 25 1.00 Ta=100℃ 1 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) 0.10 0.01 0.1 1 DRAIN CURRENT ID (A) 10 3 2005-01-18 2SK3880 5 DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) RDS (ON) − Tc DRAIN REVERSE CURRENT IDR (A) 10 COMMON Common SOURCE source Tc = 25°C Tc=25℃ PULSE TEST Pulse test IDR − VDS 4 Common source COMMON SOURCE V GS =10V VGS = 10 V PULSE TEST Pulse test 7 3 3 2 ID=1.5A 1 1 3 10 VGS=0、-1V 1 0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 DRAIN−SOURCE VOLTAGE VDS (V) 10000 CAPACITANCE – VDS (V) 5 Vth − Tc Vth GATE THRESHOLD VOLTAGE Ciss C (pF) 4 1000 Coss 3 CAPACITANCE 100 2 COMMON SOURCE VDS = 10 V ID = 1 mA Common source VGS = 0 V V GS=0V f = 1 MHz f=1MHz Tc = 25°C Tc=25℃ 10 0.1 COMMON SOURCE Crss 1 Common source VDS=10V ID=1mA PULSE TEST Pulse test -40 1 DRAIN −SOURCE VOLTAGE 10 VDS (V) 100 0 -80 0 40 80 CASE TEMPERATURE Tc 120 (°C) 160 1.


2SK388 2SK3880 2SK3889-01L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)