Document
2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6.5 19.5 80 375 6.5 8 150 −55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-16F1B
2
Weight: 5.8 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3880
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min ⎯ ±30 ⎯ 800 2.0 ⎯ 2.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.35 5.2 1500 25 140 35 Max ±10 ⎯ 100 ⎯ 4.0 1.7 ⎯ ⎯ ⎯ pF Unit µA V µA V V Ω S
⎯
10 V VGS 0V 50 Ω VOUT
⎯ ⎯ ⎯
ns
⎯ ⎯ ⎯
⎯ ⎯
Turn-on time Switching time Fall time
ton
RL= 114 Ω VDD ∼ − 400 V
80
tf
Duty < = 1%, tw = 10 µs
50
⎯ ⎯
⎯ ⎯ ⎯ nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge
toff Qg Qgs Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A
220 35 22 13
⎯ ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/µs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1200 11.5 Max 6.5 19.5 −1.7 ⎯ ⎯ Unit A A V ns µC
Marking
TOSHIBA
K3880
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3880
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COMMON SOURCE Common source TcTc =25°C 25°C = Pulse testTEST PULSE
ID − VDS
8,10 6 5.5
10
ID − VDS 8,10 6
COMMON SOURCE Tc = 25°C PULSE TEST
(A)
(A)
4
8
5.75
6
DRAIN CURRENT ID
3
5.25
DRAIN CURRENT ID
5.5
4
2
5
5.25 5
1 VGS=4.5V 0 0 2 4 6 DRAIN−SOURCE VOLTAGE 8 10
2
VGS=4.5V
0
0
10
20
30
40
VDS (V)
50
VDS (V)
DRAIN−SOURCE VOLTAGE
ID − VGS
16 Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test 12
PULSE TEST
20
(V)
VDS − VGS
COMMON CommonSOURCE source Tc = 25°C Ta=25℃ PULSE TEST Pulse test
DRAIN CURRENT ID
DRAIN−SOURCE VOLTAGE
VDS
(A)
16
12
ID=7A
8
8
3.5
4
Ta=100℃ -55 25
4
1.5
0 0 2 4 6
VGS
0
8
(V)
10
0
GATE−SOURCE VOLTAGE
4 8 12 16 GATE−SOURCE VOLTAGE VGS (V)
20
100
FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
⎪Yfs⎪ − ID
DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω)
RDS (ON) − ID
10.00 Common source COMMON SOURCE =10V V GS VGS = 10 V Tc =Tc=25℃ 25°C PULSE TEST Pulse test
Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test
PULSE TEST
10 -55
25
1.00
Ta=100℃ 1
0.1 0.1 1 10 100
DRAIN CURRENT ID (A)
0.10 0.01
0.1 1 DRAIN CURRENT ID (A)
10
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2SK3880
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DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω)
RDS (ON) − Tc
DRAIN REVERSE CURRENT IDR (A)
10
COMMON Common SOURCE source Tc = 25°C Tc=25℃ PULSE TEST Pulse test
IDR − VDS
4
Common source COMMON SOURCE V GS =10V VGS = 10 V PULSE TEST Pulse test 7
3 3 2 ID=1.5A 1
1
3 10 VGS=0、-1V 1
0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 160
0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
DRAIN−SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE – VDS
(V)
5
Vth − Tc
Vth GATE THRESHOLD VOLTAGE
Ciss
C (pF)
4
1000 Coss
3
CAPACITANCE
100
2
COMMON SOURCE VDS = 10 V ID = 1 mA
Common source VGS = 0 V V GS=0V f = 1 MHz f=1MHz Tc = 25°C Tc=25℃ 10 0.1
COMMON SOURCE
Crss
1
Common source VDS=10V ID=1mA PULSE TEST Pulse test -40
1
DRAIN −SOURCE VOLTAGE
10
VDS (V)
100
0 -80 0 40 80 CASE TEMPERATURE Tc 120 (°C) 160
1.