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SSW-524

Stanford Microdevices

DC - 8 GHZ GAAS MMIC SPST SWITCH

Product Description Stanford Microdevices’ SSW-524 is a high performance Gallium Arsenide Field Effect Transistor MMIC s...


Stanford Microdevices

SSW-524

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Description
Product Description Stanford Microdevices’ SSW-524 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin ceramic package. This single-pole, single-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. P1db at -5V is +25dBm typical and can be increased to +28dBm with -8V supply. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-524 Preliminary Preliminary DC-8 GHz GaAs MMIC SPST Switch Isolation vs. Frequency VControl = -5 V -20 -30 Product Features • High Isolation : 40dB at 2GHz, 30dB at 8GHz • Low DC Power Consumption • Low Insertion Loss : 0.9dB at 2GHz • Non-Reflective (50 Ohm termination) when • Low Cost Surface-Mountable Ceramic Package Applications • Analog/Digital Wireless Communications • AMPS, PCS, DEC and GSM Isolated dB -40 -50 -60 DC 1 2 3 4 GHz 5 6 7 8 Electrical Specifications at Ta = 25C Sy mbol Ins Parameters & Test C onditions: Zo = 50 ohms, VControl = -5V, Ta = 25oC Inserti on Loss f = 0.05-2.0 GHz f = 2.0-6.0 GHz f = 6.0-8.0 GHz f = 0.05-2.0 GHz f = 2.0-6.0 GHz f = 6.0-8.0 GHz f = 0.05-2.0 GHz f = 2.0-6.0 GHz f = 6.0-8.0 GHz f = 0.05-2.0 GHz f = 2.0-6.0 GHz f = 6.0-8.0 GHz V = -5V V = -8V V = -5V V = -8V dB m dB m dB m dB m uA nsec U nits dB dB dB dB dB dB 35 25 Min. Ty p. 0.9 1.5 1.8 45 35 30 1.3:1 1.5:1 1.7:1 1.3:1 1.5:1 1.7:1 +25...




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