IRL3705N

 Logic - Level Gate Drive  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. D G S IRL3705NPbF HEXFET® Power MOSFET VDSS RDS(on) max. ID 55V 0.01 89A G Gate GDS TO-220AB IRL3705NPbF D Drain S Source Base part number IRL3705NPbF Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ Operating Junction and TSTG Storage...