Power MOSFET
PD - 94175A
SMPS MOSFET
IRL3714 IRL3714S IRL3714L
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC C...
Description
PD - 94175A
SMPS MOSFET
IRL3714 IRL3714S IRL3714L
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
20mΩ
ID
36A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
TO-220AB IRL3714
D2Pak IRL3714S
TO-262 IRL3714L
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 36 31 140 47 33 0.31 -55 to + 175
Units
V V A W W W/°C °C
= 25°C = 70°C = 25°C = 70°C
TJ , TSTG
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
3.2 ––– 62 40
Units
°C/W
Notes through are on page 11
www.irf.com
1
06/19/01
IRL3714/3714S/3714L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage ...
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