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IRL3715Z Dataheets PDF



Part Number IRL3715Z
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRL3715Z DatasheetIRL3715Z Datasheet (PDF)

PD - 94793 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRL3715Z IRL3715ZS IRL3715ZL Qg 7.0nC VDSS RDS(on) max 20V 11m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate.

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PD - 94793 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRL3715Z IRL3715ZS IRL3715ZL Qg 7.0nC VDSS RDS(on) max 20V 11m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 50 36 Units V A ™ h h 200 45 23 0.30 -55 to + 175 W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw f 300 (1.6mm from case) 10 lbf in (1.1N m) y y Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 3.33 ––– 62 40 Units °C/W fà f ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount) g Notes  through † are on page 12 www.irf.com 1 10/7/03 IRL3715Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 20 ––– ––– ––– 1.65 ––– ––– ––– ––– ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.014 9.2 12.4 2.1 -5.2 ––– ––– ––– ––– ––– 7.0 2.1 0.9 2.3 1.7 3.2 3.7 7.1 44 11 4.6 870 270 140 ––– ––– 11 15.5 2.55 ––– 1.0 150 100 -100 ––– 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 12A Clamped Inductive Load e ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 44 12 4.5 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 9.1 2.2 Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 50 h Conditions MOSFET symbol D A 200 1.0 14 3.3 V ns nC Ù showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs e e 2 www.irf.com IRL3715Z/S/L 1000 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 3.0V 3.0V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) ID = 30A VGS = 10V T J = 25°C 100 1.5 T J = 175°C 1.0 VDS = 10V 60µs PULSE WIDTH 10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRL3715Z/S/L 10000 12 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd ID= 12A 10 8 6 4 2 0 VDS= 20V VDS= 10V C, Capacitance (pF) 1000 Ciss Coss Crss 100 1 10 100 0 VDS, Drain-to-Source Voltage (V) 4 8 12 16 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec 10msec 1 10 100 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) 1 Tc = 25°C Tj =.


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