HEXFET Power MOSFET
PD - 94793
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET...
Description
PD - 94793
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET
IRL3715Z IRL3715ZS IRL3715ZL
Qg
7.0nC
VDSS RDS(on) max
20V 11m:
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
TO-220AB IRL3715Z
D2Pak IRL3715ZS
TO-262 IRL3715ZL
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 50 36
Units
V A
h h
200 45 23 0.30 -55 to + 175 W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
f
300 (1.6mm from case) 10 lbf in (1.1N m)
y
y
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Typ.
Max.
3.33 ––– 62 40
Units
°C/W
fÃ
f
––– 0.50 ––– –––
Junction-to-Ambient (PCB Mount)
g
Notes through are on page 12
www.irf.com
1
10/7/03
IRL3715Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain...
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