HEXFET Power MOSFET
PD - 94403A
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele...
Description
PD - 94403A
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
IRL3716 IRL3716S IRL3716L
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
4.0mΩ
ID
180A
TO-220AB IRL3716
D2Pak IRL3716S
TO-262 IRL3716L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 180 130 720 210 100 1.4 -55 to + 175
Units
V V A W W W/°C °C
= 25°C = 100°C = 25°C = 100°C
TJ , TSTG
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
0.72 ––– 62 40
Units
°C/W
Notes through are on page 11
www.irf.com
1
10/8/04
IRL3716/3716S/3716L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– ...
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