Document
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC RθCS RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 91301D
IRL3803
HEXFET® Power MOSFET
D
VDSS = 30V
G RDS(on) = 0.006Ω S ID = 140A
TO-220AB
Max.
140
98
470 200 1.3 ±16 610 71 20 5.0 -55 to + 175
300 (1.6mm from case) 10 lbf•in (1.1N•m)
Min.
–––– –––– ––––
Typ.
–––– 0.50 ––––
Max.
0.75 ––––
62
Units
A
W W/°C
V mJ A mJ V/ns
°C
Units
°C/W
1/5/04
IRL3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th) gfs
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.006 Ω VGS = 10V, ID = 71A
––– ––– 0.009
VGS = 4.5V, ID = 59A
1.0 ––– ––– V VDS = VGS, ID = 250µA
55 ––– ––– S VDS = 25V, ID = 71A
––– ––– 25 ––– ––– 250
µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 140
ID = 71A
––– ––– 41 ––– ––– 78
nC VDS = 24V VGS = 4.5V, See Fig. 6 and 13
––– 14 –––
VDD = 15V
––– 230 ––– –––.