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IRL3803 Dataheets PDF



Part Number IRL3803
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3803 DatasheetIRL3803 Datasheet (PDF)

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an.

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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 91301D IRL3803 HEXFET® Power MOSFET D VDSS = 30V G RDS(on) = 0.006Ω S ID = 140A… TO-220AB Max. 140… 98… 470 200 1.3 ±16 610 71 20 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 0.75 –––– 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1/5/04 IRL3803 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) gfs IDSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.006 Ω VGS = 10V, ID = 71A „ ––– ––– 0.009 VGS = 4.5V, ID = 59A „ 1.0 ––– ––– V VDS = VGS, ID = 250µA 55 ––– ––– S VDS = 25V, ID = 71A ––– ––– 25 ––– ––– 250 µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150°C ––– ––– 100 nA VGS = 16V ––– ––– -100 VGS = -16V ––– ––– 140 ID = 71A ––– ––– 41 ––– ––– 78 nC VDS = 24V VGS = 4.5V, See Fig. 6 and 13 „ ––– 14 ––– VDD = 15V ––– 230 ––– –––.


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