PD 9.1660
PRELIMINARY
l l l l l
IRL3103D2
D
FETKYTM MOSFET & SCHOTTKY RECTIFIER
Copackaged HEXFET® Power MOSFET and S...
PD 9.1660
PRELIMINARY
l l l l l
IRL3103D2
D
FETKYTM MOSFET &
SCHOTTKY RECTIFIER
Copackaged HEXFET® Power MOSFET and
Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous
Regulator Application
VDSS = 30V RDS(on) = 0.014Ω
G
ID = 54A
S
Description
The FETKY family of copackaged HEXFET power MOSFETs and
Schottky Diodes offer the designer an innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop
Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
54 34 220 2.0 70 0.56 ± 16 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W W/°C V
°C
Thermal Resistance
Parameter
RθJC RθJA ...