MRF18060AR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz. Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz) Power Gain — 13 dB (Typ) @ 60 Watts Efficiency — 45% (Typ) @ 60 Watts Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power Excellent Thermal Stability Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 1.80 – 1.88 GHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF18060A CASE 465A–06, STYLE 1 NI–780S MRF18060ALSR3, MRF18060ASR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 180 1.03 –65 to +150 200 Unit Vdc Vdc Watts W/°C ...