2SK3499

2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 400 400 ±30 10 40 80 360 10 8 150 -55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit °C/W Circuit Configuration 4 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-09-04 2SK3499 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage cu...