FLM6472-4F
FEATURES
High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM6472-4F is a power GaAs FET that is internally matched for ...
