MX29F8100

INDEX PRELIMINARY MX29F8100 FEATURES 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical - Byte programming time: 24us in average Low power dissipation - 50mA active current - 100uA standby current CMOS and TTL compatible inputs and outputs Two independently Protected sectors Deep Power-Down Current - 1uA ICC typical Industry standard surface mount packaging - 48 lead TSOP, TYPE I - 44 lead SOP 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each - Sector erase time: 50ms typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit < 3.2V Software and hardware data protection GENERAL DESCRIPTION The MX29F8100 is a 8-mega bit Flash memory organized as either 512K wordx16 or 1M bytex8. The MX29F8100 includes 8-128KB(131,072) blocks or 8-64KW(65,536) blocks. MXIC's Flash memories offer the most costeffective and reliable read/write non-volatile random access memory. The MX29F8100 is packaged in 48-pin TSOP or 44-pin SOP. For 48-pin TSOP, CE2 and RY/BY are...