Transistors
MSG33001
SiGe HBT type
For low-noise RF amplifier
0.33+0.05 –0.02 0.10+0.05 –0.02
Unit: mm
■ Features
Compatible between high breakdown voltage and high cutoff frequency Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm)
3 0.15...
