Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
Compatible between high breakdown voltage and high cut-off frequency Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) Reduction of the mounting area and assembly cost by one half
0.12+0.03 -0.02 6 5 4
Unit: mm
0.80±0...
