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MSG43001

Panasonic Semiconductor
Part Number MSG43001
Manufacturer Panasonic Semiconductor
Description Transistor
Published Dec 28, 2005
Detailed Description Transistors MSG43001 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage an...
Datasheet PDF File MSG43001 PDF File

MSG43001
MSG43001

Overview
Transistors MSG43001 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.
6 mm × 1.
0 mm (height 0.
39 mm) Unit: mm 1 1.
00±0.
05 0.
60±0.
05 3 2 0.
39+0.
01 −0.
03 0.
15±0.
05 0.
05±0.
03 0.
35±0.
01 0.
25±0.
05 0.
50±0.
05 0.
25±0.
05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation* Junction temperature Storage temperature Symbol VCBO...


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