K2161

Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. www.DataSheet4U.com Package Dimensions unit:mm 2063A [2SK2161] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions Ratings 200 ±20 9 36 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=200V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID= 1mA VDS=10V, ID=4.5 A ID=4.5A, VGS=10V 1.5 3.5 6 250 350 Conditions Ratings min 200 ±20 100 ±10 2.5 typ max Unit V V µA µA V S mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely...