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MRF172

Advanced Semiconductor

VHF POWER MOSFET

MRF172 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal ou...


Advanced Semiconductor

MRF172

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Description
MRF172 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: PG = 10 dB Min. at 150 MHz 30:1 Load VSWR Capability Omnigold™ Metalization System F S D S C D E Ø.125 NOM. FULL R J .125 G MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC 9.0 A DIM MINIMUM inches / mm I GH MAXIMUM inches / mm 65 V ±40 V 220 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.8 °C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10830 NONE CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ TC = 25 °C TEST CONDITIONS IDS = 50 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 2.5 A VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V MINIMUM 65 TYPICAL MAXIMUM 5.0 1.0 UNITS V mA µA V mho 1.0 1.5 200 110 20 10 50 5.0 VDS = 28 V VDD = 28 V VGS = 0 V IDQ = 50 mA f = 1.0 MHz Pout = 80 W f = 150 MHz pF dB % VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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