MRF176GU

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF176GU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Electrical Performance MRF176GU @ 50 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 17 dB Typ Efficiency — 55% Typ 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance Low Crss — 7.0 pF Typ @ VDS = 50 V G G S (FLANGE) MRF176GU MRF176GV 200/150 W, 50 V, 500 MHz N–CHANNEL MOS BROADBAND RF POWER FETs D CASE 375–04, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature D Symbol VDSS VGS ID PD Tstg TJ Value 125 ± 40 16 400 2.27 – 65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.44 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. ELECTRIC...