Power Transistors
2SC4986
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC4986
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
7.5±0.2
4.5±0.2
3.8±0.2
s Features
10.8±0.2
q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping
2.5±0.1
90° 0.65±0.1 0.85±0.1
1.0±0.1 0.8C
0.8C
0.7±0.1
0.7±0.1
/ s Absolute Maximum Ratings (Ta=25˚C)
e ) Parameter
Symbol
Ratings
Unit
16.0±1.0
c type Collector to base voltage
VCBO
500
V
n d tage. ued Collector to emitter voltage VCEO
400
V
le s ontin Emitter to base voltage
VEBO
7
V
a elifecyc disc Peak collector current
ICP
4
A
n u t ed, Collector current
IC
2
A
roduc d typ Collector power dissipation PC
1.5
W
te tin ur P tinue Junction temperature
Tj
150
˚C
g fo con Storage temperature
Tstg
–55 to +150
˚C
2.5±0.2 0.8C
0.5±0.1 2.5±0.2
0.4±0.1 2.05±0.2
123
1:Emitter 2:Collector 3:Base MT3 Type Package
ain on s des foll,opwlianned dis Electrical Characteristics (Ta=25˚C)
c d inclu e type Parameter
Symbol
Conditions
min
typ
max Unit
tinue anc Collector cutoff current
ICBO
M is con inten Emitter cutoff current
IEBO
/Dis , ma hFE1 e e Forward current transfer ratio
D anc typ hFE2
VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 1A
100
µA
100
µA
15
8
inten nce Collector to emitter saturation voltage VCE(sat) Ma tena Base to emitter saturation voltage VBE(sat)
IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A
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