APM2007
N-Channel Enhancement Mode MOSFET
Features
20V/30A , RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=8mΩ(typ.) @ VGS=4.5V RDS(ON)=16mΩ(typ.) @ VGS=2.5V
Pin Description
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package
1
2
3
G
D
S
Top View of TO-252
D
Applications
Power Management in Computer, Portable...
