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KM23V32005BG

Samsung semiconductor

32M-Bit (4Mx8/2Mx16) COMS MASK ROM

KM23V32005BG 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(...


Samsung semiconductor

KM23V32005BG

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Description
KM23V32005BG 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) 8 words / 16 bytes page access Supply voltage : single +3.3V Current consumption Operating : 60mA(Max.) Standby : 30µ A(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package KM23V32005BG : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode function, page read mode allows 8 words(or 16 bytes) of data to read fast in the same page, CE and A3 ~ A20 should not be changed. This device operates with a 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V32005BG is packaged in a 44-SOP. FUNCTIONAL BLOCK DIAGRAM A20 . . . . . . . . A3 A0~A2 A-1 X BUFFERS AND DECODER MEMORY CELL MATRIX (2,097,152x16/ 4,194,304x8) PIN CONFIGURATION N.C A18 A17 A7 A6 A5 1 2 3 4 5 6 7 8 9 11 44 A20 43 A19 42 A8 41 A9 40 A10 39 A11 3...




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