PM100RSE060 Datasheet PDF - Mitsubishi Electric Semiconductor

MITSUBISHI MITSUBISHI MODULES> PM100RSE060 PM100RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM100RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. 3φ 100A, 600V Current-sense IGBT for 15kHz switching 30A, 600V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage Acoustic noise-less 11kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 110±1 95±0.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 3.22 PBT Screwing depth Min9.0 4-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 20 2±0.5 17 123 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 P 17.5 12 N 89±1 W V U 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22 –0.5 +1.0 3.22 11.6 2-2.54 1.6 32.6 A : DETAIL 31.6 19.4 LABEL 4 22 10.6 A 4.5 10 B φ2.54 0.64 Sep. 2001 MITSUBISHI PM100RSE060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo...