PM100RSE120 Datasheet PDF - Mitsubishi Electric Semiconductor

MITSUBISHI MITSUBISHI MODULES> PM100RSE120 PM100RSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM100RSE120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. 3φ 100A, 1200V Current-sense IGBT for 15kHz switching 50A, 1200V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage Acoustic noise-less 18.5/22kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 135 ±1 120.5 ±0.5 0.5 ±0.3 39.7 LABEL 4- φ5.5 MOUNTING HOLES 11 24.1 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 Br UN VN WN FO 16.5 1 23 456 789 11 13 15 10 12 14 16 3.22 20 P 10.16 10.16 10.16 39.5 10.5 φ2.54 U 51.5 A 2-φ2.54 V 26 1613 95.5 ±0.5 110 ±1 2-2.54 2-2.54 2-2.54 6-2.54 67.4 74.4 20 W 3.22 4-R6 6-M5 NUTS Screwing depth Min9.0 2-2.54 0.64 26 0.64 11.6 33.7 34.7 24.1 –0.5 4 +1.0 21.3 A : DETAIL 10.6 5 N B PPS Sep. 2001 MITSUBISHI PM100RSE120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ Br Fo VNC W N VN...