MTP15N06VL

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP15N06VL/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet V™ MTP15N06VL TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM N–Channel Enhancement–Mode Silicon Gate TM D New Features of TMOS V On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors G S CASE 221A–06, Style 5 TO–220AB Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — ...