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Product Specification
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Silicon NPN Power Transistors
2SD1296
DESCRIPTION ¡¤ With T...
www.DataSheet4U.com
Product Specification
www.jmnic.com
Silicon
NPN Power
Transistors
2SD1296
DESCRIPTION ¡¤ With TO-3PN package ¡¤ High DC current gain ¡¤ Low saturation voltage APPLICATIONS ¡¤ For audio frequency power amplifier www.DataSheet4U.com and low speed high current switching industrial use
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
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CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 TC=25¡æ 100 W Ta=25¡æ 3.0 150 -55~150 ¡æ ¡æ UNIT V V V A A
PT
Total power dissipation
Tj Tstg
Junction temperature Storage temperature
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www.DataSheet4U.com
Product Specification
www.jmnic.com
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V 1000 MIN 100 TYP.
2SD1296
SYMBOL V(BR)CEO VCEsat
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MAX
UNIT V
1.5 2.2 10 5 30000 ¦Ì
V V A mA
VBEsat ICBO IEBO hFE
Switching times ton tstg tf Turn-on ti...