Document
®
STP40NF03L
N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET™ POWER MOSFET
TYPE STP40NF03L
s
V DSS 30 V
R DS(o n) < 0.022 Ω
ID 40 A
www.DataSheet4U.com s TYPICAL RDS(on)
= 0.020 Ω LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( •) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o
Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V
Unit V V V A A A W W /o C m/J
o o
C C
(•) Pulse width limited by safe operating area
October 1999
1/8
STP40NF03L
THERMAL DATA
R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 2.1 62.5 300
o o
C/W C/W o C
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l
www.DataSheet4U.com
Parameter Drain-source Breakdown Voltage
Test Con ditions I D = 250 µ A V GS = 0
Min. 30
Typ.
Max.
Unit V
V (BR)DSS I DSS IGSS
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V
T c =125 oC
1 10 ± 100
µA µA nA
ON (∗)
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 4.5 V Test Con ditions ID = 250 µ A ID = 20 A I D = 20 A 40 Min. 1 Typ. 1.7 0.018 0.028 Max. 2.5 0.022 0.035 Unit V Ω Ω A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =20 A V GS = 0 Min. Typ. 20 830 230 92 Max. Unit S pF pF pF
2/8
STP40NF03L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd
www.DataSheet4U.com
Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge
Test Con ditions V DD = 15 V I D = 20 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 40 A V GS = 5 V
Min.
Typ. 35 205 18 7 8
Max.
Unit ns ns
23
nC nC nC
SWITCHI.