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MPSA20 Dataheets PDF



Part Number MPSA20
Manufacturers Motorola
Logo Motorola
Description Amplifier Transistor(NPN Silicon)
Datasheet MPSA20 DatasheetMPSA20 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA20/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA20 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 – 55 to +150 Uni.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA20/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA20 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)EBO ICBO 40 4.0 — — — 100 Vdc Vdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSA20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 — 400 0.25 — Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. fT Cobo 125 — — 4.0 MHz pF EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275 10 < t1 < 500 µs DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors Figure 1. Turn–On Time Figure 2. Turn–Off Time 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA20 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 7.0 5.0 10 µA 3.0 100 µA 30 µA Figure 3. Noise Voltage Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) BANDWIDTH = 1.0 Hz 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k + 20 log10 ǒ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS Ǔ en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) IC, COLLECTOR CURRENT (µA) Figure 7. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA20 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C h FE, DC CURRENT GAIN 200 25°C – 55°C 100 80 60 40 0.004 0.006 0.01 MPSA20 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 8. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) MPSA20 TJ = 25°C 100 0.8 IC = 1.0 mA 10 mA 50 mA TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% IB = 500 µA 400 µA 300 µA 0.6 100 mA 60 200 µA 40 100 µA 20 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 9. Collector Saturation Region Figure 10. Collector Characteristics TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.4 1.6 0.8 *APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) – 55°C to 25°C 0 – 0.8 25°C to 125°C – 1.6 qVB for VBE – 2.4 0.1 0..


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