MPSA20

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA20/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA20 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)EBO ICBO 40 4.0 — — — 100 Vdc Vdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSA20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Col...