MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistor
NPN Silicon
Order this document
by MPSA27/D
MPSA27
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol MPSA25 MPSA27
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCES
VEBO
IC
PD
40 60
10
500
625
5.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc)
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
Unit
°C/W
Symbol
V(BR)CES
V(BR)CBO
ICBO
ICES
IEBO
Min
60
60
—
—
—
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— 100 nAdc
— 500 nAdc
— 100 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
