SEMICONDUCTOR
TECHNICAL DATA
DARLINGTON TRANSISTOR
FEATURES ᴌComplementary to MPSA77.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACT...
SEMICONDUCTOR
TECHNICAL DATA
DARLINGTON
TRANSISTOR
FEATURES ᴌComplementary to MPSA77.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCES VEBO
IC PC Tj
Storage Temperature Range
Tstg
RATING 60 60 10 500 625 150
-55ᴕ150
UNIT V V V mA mW ᴱ ᴱ
L M
C
MPSA27
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO IEBO V(BR)CES V(BR)CBO hFE(1) * hFE(2) * VCE(sat) *
Base-Emitter Voltage
VBE *
* Pulse Test : PWᴪ300ỌS, Duty Cycleᴪ2%.
TEST CONDITION VCE=50V, IE=0 VEB=10V, IB=0 IC=100ỌA, IE=0 IC=100ỌA, IE=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA
MIN. 60 60
10K 10K
-
TYP. -
MAX. 100 100 1.5 2
UNIT nA nA V V
V V
2002. 2. 20
Revision No : 1
1/2
DC CURRENT GAIN h FE
MPSA27
1000k 300K 100K 30K 10K
3K 1K
1
h FE - IC
VCE =5V
3 10 30 100 300 COLLECTOR CURRENT I C (mA)
1K
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
VBE(sat) , VCE(sa...