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Y34NB50

ST Microelectronics
Part Number Y34NB50
Manufacturer ST Microelectronics
Description STY34NB50
Published Dec 7, 2005
Detailed Description www.DataSheet4U.com ® STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH™ MOSFET TYPE ST Y34NB50 s s s s s ...
Datasheet PDF File Y34NB50 PDF File

Y34NB50
Y34NB50

Overview
www.
DataSheet4U.
com ® STY34NB50 N - CHANNEL 500V - 0.
11Ω - 34 A - Max247 PowerMESH™ MOSFET TYPE ST Y34NB50 s s s s s s s V DSS 500 V R DS(on) < 0.
13 Ω ID 34 A TYPICAL RDS(on) = 0.
11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilitie...


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