C-MOS 4M (1,048,576X4)-BIT DYNAMIC RAM
- TOP VIEW 9 10 11 12 14 15 16 17 18 5
MB814400A-70PFTN IL22
DQ1 1 DQ2 2 WE 3 RAS 4 A9 5
GND 26 25 DQ4 24 DQ3 23 CAS 22 OE
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 DQ1 DQ2 DQ3 DQ4 1 2 24 25
RAS
CAS
WE
A0 9 A1 10 A2 11 A3 12 13 VDD(+5V)
18 A8 17 A7 16 A6 15 A5 14 A4
4 23
3 22
A0-9 CAS DQ1-4 OE RAS WE
; ADDRESS INPUTS ; COLUMN ADDRESS STROBE ; DATA INPUTS/OUTPUTS ; OUTPUT ENABLE ; ROW ADDRESS STROBE ; WRITE ENABLE
RAS
4
CLOCK GEN. No1 CLOCK GEN. No2
SUBSTRATE BIAS GEN.
CAS
3
WE
MODE CONTROL
ADDRESS BUFFER
5, 9-12, 14-18 A0-A9
DATA INPUT BUFFER COLUMN DECODER SENSE AMP. I/O GATE
1, 2, 24, 25 DQ1-DQ4
PREDECODER
ROW DECODER
w
w
w
.d
e e h s a t a
REFRESH ADDRESS COUNTER
. u t4
m o c
4,194,304-BIT MEMORY CELL
DATA OUTPUT BUFFER
22
OE
www.DataSheet4U.com
23
WRITE CLOCK GEN.
OE
.