SD2922

® SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is intended for use in 50V dc large signal applications up to 200 MHz M244 epoxy sealed ORDER CODE BRANDING SD2922 SD2922 PIN CONNECTION 1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 125 125 ± 20 40 500 +200 -65 to 150 3. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case Heatsink Thermal Resistance ∗ 0.35 0.12 o o C/W C/W ∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/13 SD2922 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS(on) gfs C ISS C OSS C RSS V GS = 0 V V GS = 0 V V GS = 20 V V DS = 10 V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA I D = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 4 411 198 27 1 Min. 125 5 5 5 3 Typ . Max. Un it V mA µA V V mho ...