4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444012A-X
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATI...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444012A-X
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
262,144 words by 16 bits organization 5 5 Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) Low VCC data retention: 1.0 V (MIN.) Operating ambient temperature: TA = –25 to +85°C Output Enable input for easy application Two Chip Enable inputs: /CE1, CE2
Part number Access time ns (MAX.) Operating supply Voltage V Operating ambient temperature °C −25 to +85 At operating mA (MAX.) 40 45 50
Note 2 Note 3 Note 4
Supply current At standby At data retention
µA (MAX.)
7
µA (MAX.)
3
5
µPD444012A-BxxX
50
Note 1
, 55, 70, 85, 100
2.7 to 3.6
µPD444012A-CxxX
70, 85, 100, 120
2.2 to 3.6
40
5 5 5 5
Notes 1. VCC ≥ 3.0 V 2. Cycle time ≥ 70 ns 3. Cycle time = 55 ns 4. Cycle time = 50 ns
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