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UPD444012A-X

NEC

4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATI...


NEC

UPD444012A-X

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Description
DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent). Features 262,144 words by 16 bits organization 5 5 Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) Low VCC data retention: 1.0 V (MIN.) Operating ambient temperature: TA = –25 to +85°C Output Enable input for easy application Two Chip Enable inputs: /CE1, CE2 Part number Access time ns (MAX.) Operating supply Voltage V Operating ambient temperature °C −25 to +85 At operating mA (MAX.) 40 45 50 Note 2 Note 3 Note 4 Supply current At standby At data retention µA (MAX.) 7 µA (MAX.) 3 5 µPD444012A-BxxX 50 Note 1 , 55, 70, 85, 100 2.7 to 3.6 µPD444012A-CxxX 70, 85, 100, 120 2.2 to 3.6 40 5 5 5 5 Notes 1. VCC ≥ 3.0 V 2. Cycle time ≥ 70 ns 3. Cycle time = 55 ns 4. Cycle time = 50 ns The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for avail...




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