UPD444016-Y

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016-Y is packaged in 44-PIN PLASTIC TSOP (II). Features 262,144 words by 16 bits organization Fast access time : 8, 10, 12 ns (MAX.) Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Output Enable input for easy application Single +5.0 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 220 200 190 At standby 10 µPD444016G5-8Y-7JF µPD444016G5-10Y-7JF µPD444016G5-12Y-7JF 44-PIN PLASTIC TSOP (II) (10.16 mm (400)) (Normal bent) 8 10 12 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M15391EJ1V0DS00 (1st edition) Date Published February 2001 NS CP(K) Printed in Japan © 2001 µPD444016-Y Pin Configuration (Marking Side) /××× indicates active low signal. 44-PIN PLASTIC TSOP (II) (10.16 mm (400)) (Normal bent) [ µPD444016G5-××Y-7JF ] A0 A1 A2 A3 A4 /CS I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 /WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 1...