MURP810

MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09617. Features Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V Avalanche Energy Rated Planar Construction Applications Switching Power Supply Power Switching Circuits General Purpose Ordering Information PART NUMBER MUR8100E RURP8100 PACKAGE TO-220AC TO-220AC BRAND MU8100 RURP8100 Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use entire part number. Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified MUR8100E RURP8100 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...