STP4NB30FP

N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP4NB30 STP4NB30FP s s s s s STP4NB30 STP4NB30FP VDSS 300 V 300 V RDS(on) <2Ω <2Ω ID 4A 4A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP4NB30 300 300 ±30 4 2.5 16 70 0.56 4 –65 to 150 150 (1)ISD ≤4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (*) Limited only by ...