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GM71V16403C

Hynix Semiconductor

(GM71VS16403CL / GM71V16403C) 4M x 16-Bit CMOS DRAM

GM71V16403C GM71VS16403CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71V(S)16403C/CL is the new genera...


Hynix Semiconductor

GM71V16403C

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Description
GM71V16403C GM71VS16403CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71V(S)16403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)16403C/CL offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)16403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ, and a standard 300 mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features * 4,194,304 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (3.3V +/- 0.3V) * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71V(S)16403C/CL-5 GM71V(S)16403C/CL-6 GM71V(S)16403C/CL-7 50 60 70 13 15 18 tRC 84 104 124 tHPC 20 25 30 * Low Power Active : 324/288/252mW (MAX) Standby : 7.2mW (CMOS level : MAX) : 0.36mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 4096 Refresh Cycles/64ms * 4096 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Backup Operation (L-vers...




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