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GM71V17800C

Hynix Semiconductor

(GM71VS17800CL / GM71V17800C) 2M x 8-Bit CMOS DRAM

GM71V17800C GM71VS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71V(S)17800C/CL is the new genera...


Hynix Semiconductor

GM71V17800C

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Description
GM71V17800C GM71VS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71V(S)17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17800C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17800C/CL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)17800C/CL to be packaged in standard 400 mil 28pin plastic SOJ, and standard 400mil 28pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. Features * 2,097,152 Words x 8 Bit Organization * Fast Page Mode Capability * Single Power Supply (3.3V+/-0.3V) * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC GM71V(S)17800C/CL-5 GM71V(S)17800C/CL-6 GM71V(S)17800C/CL-7 50 60 70 13 15 18 tRC 90 110 130 tPC 35 40 45 Pin Configuration 28 SOJ VCC I/O0 I/O1 I/O2 I/O3 WE RAS NC A10 1 2 3 4 5 6 7 8 9 28 VSS 27 I/O7 26 I/O6 25 I/O5 24 I/O4 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS * Low Power Active : 468/432/396mW (MAX) Standby : 7.2mW (CMOS level : MAX) 0.54mW (L- version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 2048 Refresh Cycles/32ms * 2048 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L- version) VCC I/O0 I/O1 I/O2 I/O3 WE...




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