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GM71VS65803AL

Hynix Semiconductor

(GM71VS65803AL / GM71V65803A) 8M x 8-Bit CMOS DRAM

LG Semicon Co.,Ltd. GM71V65803A GM71VS65803AL 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71V(S)65803A/...


Hynix Semiconductor

GM71VS65803AL

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Description
LG Semicon Co.,Ltd. GM71V65803A GM71VS65803AL 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description The GM71V(S)65803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as advanced circuit techniques for wide operating margins, both internally and to the system user. System oriented features include single power supply of 3.3V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The GM71V(S)65803A/AL offers Extended Data Out (EDO) Mode as a high speed access mode. Pin Configuration 32 SOJ / TSOP II VCC IO0 IO1 IO2 IO3 NC VCC /WE /RAS A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS IO7 IO6 IO5 IO4 VSS /CAS /OE NC A11 A10 A9 A8 A7 A6 VSS Features * 8,388,608 Words x 8 Bit * Extended Data Out (EDO) Mode Capability * Fast Access Time & Cycle Time (Unit: ns) A1 A2 A3 A4 A5 VCC tRAC GM71V(S)65803A/AL-5 GM71V(S)65803A/AL-6 50 60 tAA 25 30 tCAC 13 15 tRC 84 104 tHPC 20 25 w w w . t a d h s a *Power dissipation - Active : 702mW/630mW(MAX) - Standby : 1.8 mW ( CMOS level : MAX ) 0.54mW ( L-Version : MAX) *EDO page mode capability *Access time : 50ns/60ns (max) *Refresh cycles - RAS only Refresh 4096 cycles/64 §Â (GM71V65803A) 4096 cycles/128§Â (GM71VS65803AL)(L_Version) *CBR & Hidden Refresh 4096 cycles/64 §Â (GM71V65803A) 4096 cycles/128 §Â (GM71VS65803AL)( L-Versio...




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