2SC1215

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 s Features q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2.3±0.2 3 V le on Collector current IC 50 mA a elifecyc , disc Collector power dissipation PC 400 mW n u ct ped Junction temperature Tj 150 ˚C rodu d ty Storage temperature Tstg –55 ~ +150 ˚C +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A te tin s wing foudrisPcontinue Electrical Characteristics (Ta=25˚C) in n follo ned Parameter Symbol Conditions min typ max Unit a o ludes e, pla Collector to base voltage VCBO IC =100µA, IE = 0 30 V inc typ Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V c tinued ance Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 M is con inten Base to emitter voltage VBE VCB = 10V, IE = –2mA 0.72 V /Dis ma Collector to emitter saturation voltage ce pe, Common emitter reverse transfer capacitance D tenan ce ty Transition frequency VCE(sat) Cre fT* IC = 10mA, IB = 1mA 0.1 V VCE = 10V, IC = 1mA, f = 10.7MHz 1 1.5 pF VCB = 10V, IE = –15mA, f = 100MHz 600 1200 1600 MHz ain nan Power gain M ainte Base time constant ...