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STW7NA100 Dataheets PDF



Part Number STW7NA100
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STW7NA100 DatasheetSTW7NA100 Datasheet (PDF)

STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STW7NA100 STH7NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 1.7 Ω < 1.7 Ω ID 7A 4.3 A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINT.

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STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STW7NA100 STH7NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 1.7 Ω < 1.7 Ω ID 7A 4.3 A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW7NA100 V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj March 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Unit STH7NA100FI V V V 4.3 2.7 28 70 0.56 4000 A A A W W/ o C V o o 1000 1000 ± 30 7 4.4 28 190 1.52  -65 to 150 150 C C 1/6 (•) Pulse width limited by safe operating area STW7NA100-STH7NA100FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.65 30 0.1 300 ISOWATT218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 7 800 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 1000 50 250 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 100 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 250 µ A I D = 3.5 A 7 Min. 2.25 Typ. 3 1.45 Max. 3.75 1.7 Unit V Ω Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. 5 Typ. 7 3170 270 76 4100 351 99 Max. Unit S pF pF pF 2/6 STW7NA100-STH7NA100FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 500 V 3.5 A R G = 4.7 Ω V DD = 800 V ID = 7 A ID = V GS = 10 V V GS = 10 V 125 17 58 150 nC nC nC Min. Typ. 28 19 Max. 40 27 Unit ns ns SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 800 V R G = 4.7 Ω I D = 7A V GS = 10 V Min. Typ. 35 15 55 Max. 50 21 77 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A I SD = 7 A V DD = 100 V V GS = 0 di/dt = 100 A/ µ s o T j = 150 C 835 14 33 Test Conditions Min. Typ. Max. 7 28 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STW7NA100-STH7NA100FI TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/6 STW7NA100-STH7NA100FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 D1 C D M U F H 1 2 3 L1 L4 P025C 5/6 G STW7NA100-STH7NA100FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from it.


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