IRL7833S

PD - 94668B Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRL7833 IRL7833S IRL7833L Qg 32nC VDSS RDS(on) max 30V 3.8m: TO-220AB IRL7833 D2Pak IRL7833S TO-262 IRL7833L Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 150 600 140 72 0.96 -55 to + 175 Units V ™ f 110f A W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g W/°C °C Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) y y Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient h Junction-to-Ambient (PCB Mount) Typ. Max. 1.04 ––– 62 40 Units °C/W h ––– 0.50 ––– ––– gà Notes  through † are on page 12 www.irf.com 1 4/22/04 IRL7833/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Br...