INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description
PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel ...
