IRG4IBC30S

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation Industry standard TO-220 Full-Pak C VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A N-channel Benefits Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs TO-220 Full-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 23.5 13.0 68 68 ± 20 10 45 18 -55 to + 150 300 (0.063 in. (1.6mm) from case) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient, typical socket mount Weight Typ. ––– ––– 2.1 (0.075) Max. 2.8 65 ––– Units °C/W g (oz) www.irf.com 1 08/02/01 IRG4IBC30S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR...