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IRG4IBC10UD

Part Number	IRG4IBC10UD
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Published	Nov 24, 2005
Detailed Description	PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT V...
Datasheet	IRG4IBC10UD PDF File

Overview

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ.
= 2.
15V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 Full-Pak G E @VGE = 15V, IC = 5.
0A N-channel tf(typ.
) = 140ns Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application co...

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IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

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