CY7C286

CY7C286 64K x 8 Reprogrammable PROM Features CMOS for optimum speed/power Windowed for reprogrammability High speed — tAA = 45 ns Low power — 120 mA active — 40 mA standby EPROM technology, 100%programmable 5V ±10% VCC, commercial and military TTL-compatible I/O Capable of withstanding >2001V static discharge in the active mode and 40 mA in the standby mode. Access time is 45 ns. The CY7C286 is available in a cerDIP package equipped with an erasure window to provide reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C286 offers the advantage of low power, superior performance, and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be 100% tested with each cell being programmed, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming. Reading the CY7C286 is accomplished by placing active LOW signals on the OE and CE pins. The contents of the memory location addressed by the address lines (A 0 – A15) will become available on the output lines (O0 – O 7). Functional Description The CY7C286 is a high-performance 64K x 8 CMOS PROM. The CY7C...