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ST3230C Dataheets PDF



Part Number ST3230C
Manufacturers International Rectifier
Logo International Rectifier
Description PHASE CONTROL THYRISTORS Hockey Puk Version
Datasheet ST3230C DatasheetST3230C Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Bulletin I25200/A ST3230C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 3360A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical max. (R-PUK) Units A °C A °C A °C A A KA2s KA2s V .

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Previous Datasheet Index Next Data Sheet Bulletin I25200/A ST3230C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 3360A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical max. (R-PUK) Units A °C A °C A °C A A KA2s KA2s V µs °C ST3230C..R 2785 80 3360 55 5970 25 61200 64000 18730 17000 1000 to 1800 500 125 D-425 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 10 12 ST3230C..R 14 16 18 V DRM /V RRM , max. repetitive peak and off-state voltage V 1000 1200 1400 1600 1800 VRSM , maximum nonrepetitive peak voltage V 1100 1300 1500 1700 1900 I DRM /I RRM max. @ TC = 125°C mA 250 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST3230C..R 2785 (1720) 80 3360 (1360) 55 (85) 5970 61200 64000 49000 51300 Units A °C A °C A Conditions 12 180° conduction, half sine wave double side (single side [anode side]) cooled DC @ 25°C heatsink temperature double side cooled t = 10ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TC = 125°C A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms TJ = TJ max. TJ = TJ max. I2 t Maximum I2t for fusing 18730 17000 12000 10920 KA2s V T(TO) Max. value of threshold voltage rt V TM IL Max. value of on-state slope resistance Max. on-state voltage Typical latching current 0.92 0.09 1.3 300 V mΩ V mA I = 2900A, TC = 25°C pk T J = 25°C, V D = 5V Switching Parameter di/dt Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t d 2222222222222 ST3230C..R 150 (300) Units Conditions A/µs From 67% VDRM to 1000A gate drive 10V, 5Ω, t = 0.5µs r to 1A, TJ = TJ max. Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C d Maximum delay time 4.5 µs Rise time 0.5µs IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V, p t q Typical turn-off time 500 dIRR/dt = 2A/µs, VDR = 67% VDRM, dvDR/dt = 8V/µs linear D-426 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Voltage Drop Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current D-429 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series Fig. 7 - Stored Charged Fig. 8 - Thermal Impedance Z thJ-C Characteristics Fig. 9 - Gate Characteristics D-430 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series Blocking Parameter dv/dt IRRM IDRM Maximum linear rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST3230C..R 500 250 Units V/µs mA Conditions TJ = TJ max. to 67% rated VDRM TJ = 125°C rated V DRM/V RRM applied Triggering Parameter PGM PG(AV) IGM VGM -VGM IGT VGT Maximum peak gate power Maximum average gate power Max. peak positive gate current Max. peak positive gate voltage Max. peak negative gate voltage Maximum DC gate current required to trigger Maximum gate voltage required to trigger ST3230C..R 150 10 30 30 0.25 400 Units W A V V mA Conditions t = 100µs p Anode positive with respect to cathode Anode positive with respect to cathode Anode negative with respect to cathode TC = 25°C, VDRM = 5V TC = 25°C, VDRM = 5V 4 V 23 VGD DC gate voltage not to trigger 0.25 V TC = 125°C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter TJ max. Max. operating temperature T stg ST3230C..R 125 -55 to 125 0.019 0.0095 0.004 0.002 43000 (4400) 1600 (R-PUK) Units °C Conditions On-state (conducting) Max. storage temperature range Thermal resistance, junction to case RthJ-C Rth(C-h) F wt DC operation single side cooled K/W K/W N (Kg) g See Outline Table DC operation double side cooled Single side cooled Double side cooled Clamping force 43KN with mounting compound Thermal resistance, case to heatsink Mounting force ± 10% Approximate weight Case style ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle 180° 120° 60° Single side 0.0010 0.0017 0.0044 Double side 0.0010 0.0017 0.0044 Units K/W Conditions TJ = TJ max. D-427 3333 To Order Previous Datasheet Index Next Data Sheet ST3230C..R Series Ordering Information Table Device Code ST 323 1 1 2 3 4 5 6.


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